During the 2025 SK AI Summit in Seoul, SK Hynix presented its roadmap for the future of memory technology. The company outlined plans to develop high-speed, high-bandwidth memory aimed at supporting next-generation AI applications. At least this is according to a post on X by @harukaze5719, which was reported to appear at the 2025 SK AI Summit in Seoul
SK Hynix Memory in AI, and new product roadmap pic.twitter.com/x2zqdAo1JC
— 포시포시 (@harukaze5719) November 3, 2025
The roadmap is split into two main stages. Between 2026 and 2028, SK hynix plans to roll out next-generation memory like HBM4, HBM4E, and LPDDR6. The following phase, covering 2029 to 2031, focuses on even more advanced technologies, including HBM5, the improved HBM5E, and the long-awaited DDR6. This later stage will also mark the debut of “GDDR7-Next, likely to emerge as GDDR8, and a completely new 3D DRAM architecture.
One of the biggest highlights in SK hynix’s plan is DDR6. Some reports had it coming as early as 2027, but now it’s looking more like a late-decade launch. The new standard will be fast, really fast, with base speeds expected to double those of DDR5, jumping from 8,800 MT/s to about 17,600 MT/s. And with its new multi-channel setup, overclocked versions could reach an impressive 21,000 MT/s.
The roadmap ties closely to the wider tech ecosystem, confirming SK hynix’s plans to develop PCIe 7.0 solid-state drives. The timing aligns with the PCI-SIG’s own schedule, which expects to finalize the standard around 2028. For context, today’s fastest PCIe 5.0 SSDs reach about 14 GB/s in read speed. Early PCIe 6.0 prototypes have already exceeded 30 GB/s, and PCIe 7.0 is expected to double that yet again, while work on PCIe 8.0 quietly begins in parallel.
Step by step, the industry is moving past one of its biggest hurdles, memory bandwidth. Each breakthrough brings the hardware a little closer to matching the immense appetite of today’s AI systems.
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